Single-crystal GaN/Gd2O3/GaN heterostructure

M. Hong; J. Kwo; S. N.G. Chu; J. P. Mannaerts; A. R. Kortan; H. M. Ng; A. Y. Cho; K. A. Anselm; C. M. Lee; J. I. Chyi

doi:10.1116/1.1473178

Single-crystal GaN/Gd₂O₃/GaN heterostructure

M. Hong, J. Kwo, S. N.G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

Original language	English
Pages (from-to)	1274-1277
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1473178
State	Published - May 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 1 Oct 2001 → 3 Oct 2001

Access to Document

10.1116/1.1473178

Cite this

@article{4befe2a5562d4cb8b482bcccc7c16780,

title = "Single-crystal GaN/Gd2O3/GaN heterostructure",

abstract = "The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.",

author = "M. Hong and J. Kwo and Chu, {S. N.G.} and Mannaerts, {J. P.} and Kortan, {A. R.} and Ng, {H. M.} and Cho, {A. Y.} and Anselm, {K. A.} and Lee, {C. M.} and Chyi, {J. I.}",

year = "2002",

month = may,

doi = "10.1116/1.1473178",

language = "???core.languages.en_GB???",

volume = "20",

pages = "1274--1277",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

}

TY - JOUR

T1 - Single-crystal GaN/Gd2O3/GaN heterostructure

AU - Hong, M.

AU - Kwo, J.

AU - Chu, S. N.G.

AU - Mannaerts, J. P.

AU - Kortan, A. R.

AU - Ng, H. M.

AU - Cho, A. Y.

AU - Anselm, K. A.

AU - Lee, C. M.

AU - Chyi, J. I.

PY - 2002/5

Y1 - 2002/5

N2 - The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

AB - The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

UR - http://www.scopus.com/inward/record.url?scp=0035998570&partnerID=8YFLogxK

U2 - 10.1116/1.1473178

DO - 10.1116/1.1473178

M3 - 會議論文

AN - SCOPUS:0035998570

SN - 1071-1023

VL - 20

SP - 1274

EP - 1277

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Single-crystal GaN/Gd2O3/GaN heterostructure

Abstract

Access to Document

Fingerprint

Cite this

Single-crystal GaN/Gd₂O₃/GaN heterostructure