Single-crystal GaN/Gd2O3/GaN heterostructure

M. Hong, J. Kwo, S. N.G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

Research output: Contribution to journalConference articlepeer-review

35 Scopus citations


The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

Original languageEnglish
Pages (from-to)1274-1277
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - May 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 1 Oct 20013 Oct 2001


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