Abstract
This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 3-11 |
| Number of pages | 9 |
| Journal | International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1997 |
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