TY - JOUR
T1 - Simulation of amorphous silicon thin-film transistor including adapted Gummel method
AU - Tsai, Yao Tsung
AU - Huang, Li Chung
PY - 1997/1
Y1 - 1997/1
N2 - This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.
AB - This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.
UR - http://www.scopus.com/inward/record.url?scp=0030836325&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1099-1204(199701)10:1<3::AID-JNM253>3.0.CO;2-#
DO - 10.1002/(SICI)1099-1204(199701)10:1<3::AID-JNM253>3.0.CO;2-#
M3 - 期刊論文
AN - SCOPUS:0030836325
SN - 0894-3370
VL - 10
SP - 3
EP - 11
JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
IS - 1
ER -