Simulation and experimental study of a K-band extended interaction oscillator for microwave processing systems

W. Y. Chiang, P. H. Hung, H. Y. Chen, H. H. Teng, S. H. Chen

Research output: Contribution to journalArticlepeer-review

Abstract

High-power microwave sources have been widely applied for material processing in scientific research and manufacturing. The development of stable, high-frequency, high-power microwave sources is essential for achieving efficient microwave processing. This study proposes using a square doubly reentrant coupled-cavity as the slow-wave resonant structure in a K-band extended interaction oscillator (EIO). This design allows for ease of fabrication and high-power capability. The EIO is designed to operate in single 0-mode. The simulation results show that the competing π/5-mode can be effectively suppressed by properly choosing the width and location of the output coupler. The simulation and experiments successfully demonstrate stable, single-mode, tunable, high-performance operation of the EIO. The experimental measurements show a maximum output power of 1.776 kW (18.56% electronic efficiency), and a wave frequency of 24.324 GHz at a beam voltage of 17.4 kV and beam current of 550 mA. The EIO microwave source is suitable for interdisciplinary applications that require higher heating rates and greater uniformity.

Original languageEnglish
Article number124701
JournalReview of Scientific Instruments
Volume93
Issue number12
DOIs
StatePublished - 1 Dec 2022

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