This paper is a summary of a research and development programme, conducted during the past 3 years on the CMS Preshower silicon sensors to define the specifications. The main purpose was to study the radiation hardness of these devices resulting from the specific design (metal lines wider than the p+ implants) and the production technology, a deep n+ layer on the ohmic side. An acceptable noise and a uniform charge collection were guaranteed by an appropriate choice of the interstrip region width. About 65 sensors, of different designs and produced by six manufacturers, were irradiated with neutrons and protons and thoroughly tested before and after irradiation. The results of the tests and the final specifications are presented.
|Number of pages
|Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
|Published - 1 Mar 2002
- Radiation hardness
- Silicon strips