Silicon sensors for the CMS preshower detector

P. Bloch, Y. H. Chang, A. E. Chen, A. Cheremukhin, N. Egorov, A. Go, S. Golubkov, I. Golutvin, S. R. Hou, K. Konjkov, Y. Kozlov, A. Kyriakis, W. T. Lin, D. Loukas, A. Markou, J. Mousa, A. Peisert, A. Sidorov, E. Tsoi, N. ZamiatinE. Zubarev

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This paper is a summary of a research and development programme, conducted during the past 3 years on the CMS Preshower silicon sensors to define the specifications. The main purpose was to study the radiation hardness of these devices resulting from the specific design (metal lines wider than the p+ implants) and the production technology, a deep n+ layer on the ohmic side. An acceptable noise and a uniform charge collection were guaranteed by an appropriate choice of the interstrip region width. About 65 sensors, of different designs and produced by six manufacturers, were irradiated with neutrons and protons and thoroughly tested before and after irradiation. The results of the tests and the final specifications are presented.

Original languageEnglish
Pages (from-to)265-277
Number of pages13
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume479
Issue number2-3
DOIs
StatePublished - 1 Mar 2002

Keywords

  • CMS
  • Preshower
  • Radiation hardness
  • Silicon strips

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