TY - GEN
T1 - Silicon Quantum Dots with Large Stokes Shift and Long Photoluminescence Lifetime for Energy and Biomedical Applications
AU - Tu, Chang Ching
AU - Han, Shanshan
AU - Chen, Guo
AU - Yang, Wenzhao
AU - Kuo, Hao Chung
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Since the demonstration of visible photoluminescence (PL) emitted from porous silicon in 1990s [1], silicon quantum dots (SiQDs) have drawn much attention due to its plentiful earth abundance, exceptional biocompatibility, versatile surface chemistry and high PL quantum yield (PLQY). Compared to conventional II-VI or III-V QDs and organic dyes, the SiQDs are free of heavy metal toxicity and much less susceptible to photobleaching. In addition to the advantages described above, in this wok we focus on another two unique optical properties of SiQDs, namely large Stokes shift and long PL lifetime. In addition to the quasi-direct bandgap and bandgap enlargement due to the quantum confinement effect, the PL process of the SiQDs also involves radiative recombination between oxygen related surface defect states [2]. As a result, nearly all SiQDs reported in literature are characterized by a strong Fourier-transform infrared (FTIR) absorption peak (950-1250 cm-1) due to the Si-O-Si bond and relatively long PL lifetimes (typically 20-40 μs). On the other hand, the light absorption property of the SiQDs remains similar to the bulk silicon, with the primary absorption lies in the ultraviolet (UV) range and negligible absorption in the visible range.
AB - Since the demonstration of visible photoluminescence (PL) emitted from porous silicon in 1990s [1], silicon quantum dots (SiQDs) have drawn much attention due to its plentiful earth abundance, exceptional biocompatibility, versatile surface chemistry and high PL quantum yield (PLQY). Compared to conventional II-VI or III-V QDs and organic dyes, the SiQDs are free of heavy metal toxicity and much less susceptible to photobleaching. In addition to the advantages described above, in this wok we focus on another two unique optical properties of SiQDs, namely large Stokes shift and long PL lifetime. In addition to the quasi-direct bandgap and bandgap enlargement due to the quantum confinement effect, the PL process of the SiQDs also involves radiative recombination between oxygen related surface defect states [2]. As a result, nearly all SiQDs reported in literature are characterized by a strong Fourier-transform infrared (FTIR) absorption peak (950-1250 cm-1) due to the Si-O-Si bond and relatively long PL lifetimes (typically 20-40 μs). On the other hand, the light absorption property of the SiQDs remains similar to the bulk silicon, with the primary absorption lies in the ultraviolet (UV) range and negligible absorption in the visible range.
UR - http://www.scopus.com/inward/record.url?scp=85141053522&partnerID=8YFLogxK
U2 - 10.1109/SNW56633.2022.9889044
DO - 10.1109/SNW56633.2022.9889044
M3 - 會議論文篇章
AN - SCOPUS:85141053522
T3 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Y2 - 11 June 2022 through 12 June 2022
ER -