Silicide contacts for sub-0.25 μm devices

L. J. Chen; S. L. Cheng; S. M. Chang; Y. C. Peng; H. Y. Huang; L. W. Cheng

doi:10.1557/proc-564-123

Silicide contacts for sub-0.25 μm devices

L. J. Chen, S. L. Cheng, S. M. Chang, Y. C. Peng, H. Y. Huang, L. W. Cheng

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Low resistivity TiSi₂, CoSi₂ and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi₂ on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi₂ by the addition of N₂ during Ti sputtering or N⁺ implantation in (001)Si, self-aligned formation of CoSi₂ on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi₂ on (001)Si, improvement of thermal stability of CoSi₂ by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Original language	English
Pages (from-to)	123-134
Number of pages	12
Journal	Materials Research Society Symposium - Proceedings
Volume	564
DOIs	https://doi.org/10.1557/proc-564-123
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' - San Francisco, CA, United States Duration: 5 Apr 1999 → 7 Apr 1999

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title = "Silicide contacts for sub-0.25 μm devices",

abstract = "Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.",

author = "Chen, {L. J.} and Cheng, {S. L.} and Chang, {S. M.} and Peng, {Y. C.} and Huang, {H. Y.} and Cheng, {L. W.}",

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TY - JOUR

T1 - Silicide contacts for sub-0.25 μm devices

AU - Chen, L. J.

AU - Cheng, S. L.

AU - Chang, S. M.

AU - Peng, Y. C.

AU - Huang, H. Y.

AU - Cheng, L. W.

PY - 1999

Y1 - 1999

N2 - Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

AB - Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

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U2 - 10.1557/proc-564-123

DO - 10.1557/proc-564-123

M3 - 會議論文

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EP - 134

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 5 April 1999 through 7 April 1999

ER -

Silicide contacts for sub-0.25 μm devices

Abstract

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