Silicide contacts for sub-0.25 μm devices

L. J. Chen, S. L. Cheng, S. M. Chang, Y. C. Peng, H. Y. Huang, L. W. Cheng

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Original languageEnglish
Pages (from-to)123-134
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' - San Francisco, CA, United States
Duration: 5 Apr 19997 Apr 1999


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