Si/Ge/Si Photodetector by Rapid-Melting-Growth Technique

Cheng Lun Hsin, Shang Ming Wang, Guan Yu Chen, Meng Hsin Wu, Chun Wei Huang, Shu Chi Hsu, Shen Chuan Lo

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


For high-speed data processing, the synergy of photons and electrons requires their absorption and conversion characteristics to be suited for near-infrared optical communication. Here, we report on the formation of high-quality germanium on oxide for photodetectors as well as its characteristic measurements. The Ge film was made by using the rapid-melting-growth technique, and the quality was verified by Raman spectroscopy and standard electron microscopy. The high-quality Ge was integrated with P-type and N-type silicon pillars to form a PIN photodetector. The electrical measurement identified its responsivity to the near-infrared spectrum. This work demonstrated that a high-quality Ge film can be obtained using a metal-oxide-semiconductor field-effect transistor compatible process with good photoelectric conversion efficiency and responsivity.

Original languageEnglish
Pages (from-to)607-610
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number3
StatePublished - May 2018


  • Ge
  • PIN photodetector
  • rapid-melting-growth


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