@inproceedings{39b05b3500b24e2380a9847fcf96ba61,
title = "SiGe quantum rings by ultra-high vacuum chemical vapor deposition",
abstract = "SiGe quanrum rings (QRs) grown at 500°C and 600°C were observed on SiGe quantum dots (QDs) capped with Si. Average depth and diameter are 9 nm and 185 nm, respectively, for QRs at 500°C, while those are 0.9 nm and 84 nm for QRs at 600°C. Ge out-diffusion mechanism is proposed to be responsible for nanorings formation at 500°C, and Si surface diffusion toward strain-free edges is proposed to be responsible for nanorings formation at 600°C. Raman spectroscopy suggests that formation of QRs at 600°C is closely correlated with a strain-driven process. QRs grown at 600°C are the metastable states and can be only observed in very limited conditions. Both thick cap and high thermal budget can destroy SiGe nanorings structures.",
author = "Lee, {C. H.} and Lin, {C. M.} and Liu, {C. W.} and Chang, {H. T.} and Lee, {S. W.} and P. Shushpannikov and Gorodtsov, {V. A.} and Goldstein, {R. V.}",
year = "2009",
doi = "10.1149/1.2986822",
language = "???core.languages.en_GB???",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "647--657",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "null ; Conference date: 12-10-2008 Through 17-10-2008",
}