SiGe BiCMOS power amplifier with a switchable output matching network for efficiency enhancement

Yi Chun Lee; Hsiao Yun Li; Jia Shiang Fu

doi:10.1109/RWS.2015.7129737

SiGe BiCMOS power amplifier with a switchable output matching network for efficiency enhancement

Yi Chun Lee, Hsiao Yun Li, Jia Shiang Fu

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P_1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.

Original language	English
Article number	7129737
Pages (from-to)	62-64
Number of pages	3
Journal	IEEE Radio and Wireless Symposium, RWS
Volume	2015-June
Issue number	June
DOIs	https://doi.org/10.1109/RWS.2015.7129737
State	Published - 19 Jun 2015
Event	2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015 - San Diego, United States Duration: 25 Jan 2015 → 28 Jan 2015

Keywords

efficiency enhancement
Power amplifier
SiGe
switch
tunable matching network

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10.1109/RWS.2015.7129737

Cite this

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abstract = "A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.",

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AU - Lee, Yi Chun

AU - Li, Hsiao Yun

AU - Fu, Jia Shiang

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Y1 - 2015/6/19

N2 - A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.

AB - A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.

KW - efficiency enhancement

KW - Power amplifier

KW - SiGe

KW - switch

KW - tunable matching network

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JO - IEEE Radio and Wireless Symposium, RWS

JF - IEEE Radio and Wireless Symposium, RWS

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T2 - 2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015

Y2 - 25 January 2015 through 28 January 2015

ER -

SiGe BiCMOS power amplifier with a switchable output matching network for efficiency enhancement

Abstract

Keywords

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