SiC structural characterization by non destructive near-field microscopy techniques

Kuan Ting Wu; Enora Vuillermet; Elise Usureau; Youssef El-Helou; Michel Kazan; Wei Yen Woon; Mihai Lazar; Aurelien Bruyant

doi:10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques

Kuan Ting Wu, Enora Vuillermet, Elise Usureau, Youssef El-Helou, Michel Kazan, Wei Yen Woon, Mihai Lazar, Aurelien Bruyant

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

Original language	English
Title of host publication	2022 International Semiconductor Conference, CAS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	73-76
Number of pages	4
ISBN (Electronic)	9781665452557
DOIs	https://doi.org/10.1109/CAS56377.2022.9934358
State	Published - 2022
Event	2022 International Semiconductor Conference, CAS 2022 - Poiana Brasov, Romania Duration: 12 Oct 2022 → 14 Oct 2022

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	2022-October

Conference

Conference	2022 International Semiconductor Conference, CAS 2022
Country/Territory	Romania
City	Poiana Brasov
Period	12/10/22 → 14/10/22

Keywords

4H
PiFM
a-SiC
s-SNOM
μRaman

Access to Document

10.1109/CAS56377.2022.9934358

Cite this

Wu, K. T., Vuillermet, E., Usureau, E., El-Helou, Y., Kazan, M., Woon, W. Y., Lazar, M., & Bruyant, A. (2022). SiC structural characterization by non destructive near-field microscopy techniques. In 2022 International Semiconductor Conference, CAS 2022 (pp. 73-76). (Proceedings of the International Semiconductor Conference, CAS; Vol. 2022-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAS56377.2022.9934358

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title = "SiC structural characterization by non destructive near-field microscopy techniques",

abstract = "SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.",

keywords = "4H, PiFM, a-SiC, s-SNOM, μRaman",

author = "Wu, {Kuan Ting} and Enora Vuillermet and Elise Usureau and Youssef El-Helou and Michel Kazan and Woon, {Wei Yen} and Mihai Lazar and Aurelien Bruyant",

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Wu, KT, Vuillermet, E, Usureau, E, El-Helou, Y, Kazan, M, Woon, WY, Lazar, M & Bruyant, A 2022, SiC structural characterization by non destructive near-field microscopy techniques. in 2022 International Semiconductor Conference, CAS 2022. Proceedings of the International Semiconductor Conference, CAS, vol. 2022-October, Institute of Electrical and Electronics Engineers Inc., pp. 73-76, 2022 International Semiconductor Conference, CAS 2022, Poiana Brasov, Romania, 12/10/22. https://doi.org/10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques. / Wu, Kuan Ting; Vuillermet, Enora; Usureau, Elise et al.
2022 International Semiconductor Conference, CAS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 73-76 (Proceedings of the International Semiconductor Conference, CAS; Vol. 2022-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - SiC structural characterization by non destructive near-field microscopy techniques

AU - Wu, Kuan Ting

AU - Vuillermet, Enora

AU - Usureau, Elise

AU - El-Helou, Youssef

AU - Kazan, Michel

AU - Woon, Wei Yen

AU - Lazar, Mihai

AU - Bruyant, Aurelien

PY - 2022

Y1 - 2022

N2 - SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

AB - SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

KW - 4H

KW - PiFM

KW - a-SiC

KW - s-SNOM

KW - μRaman

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T3 - Proceedings of the International Semiconductor Conference, CAS

SP - 73

EP - 76

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Semiconductor Conference, CAS 2022

Y2 - 12 October 2022 through 14 October 2022

ER -

Wu KT, Vuillermet E, Usureau E, El-Helou Y, Kazan M, Woon WY et al. SiC structural characterization by non destructive near-field microscopy techniques. In 2022 International Semiconductor Conference, CAS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 73-76. (Proceedings of the International Semiconductor Conference, CAS). doi: 10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques

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Keywords

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