SiC-based gas sensor development

Gary W. Hunter, Philip G. Neudeck, M. Gray, D. Androjna, Liang Yu Chen, Richard W. Hoffman, C. C. Liu, Q. H. Wu

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations


Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 10 Oct 199915 Oct 1999


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