SiC-based gas sensor development

Gary W. Hunter; Philip G. Neudeck; M. Gray; D. Androjna; Liang Yu Chen; Richard W. Hoffman; C. C. Liu; Q. H. Wu

SiC-based gas sensor development

Gary W. Hunter, Philip G. Neudeck, M. Gray, D. Androjna, Liang Yu Chen, Richard W. Hoffman, C. C. Liu, Q. H. Wu

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

29 Scopus citations

Abstract

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO₂/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999

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@article{d9ddb321fdac4d31988eccb87cebd872,

title = "SiC-based gas sensor development",

abstract = "Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.",

author = "Hunter, {Gary W.} and Neudeck, {Philip G.} and M. Gray and D. Androjna and Chen, {Liang Yu} and Hoffman, {Richard W.} and Liu, {C. C.} and Wu, {Q. H.}",

year = "2000",

language = "???core.languages.en_GB???",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - SiC-based gas sensor development

AU - Hunter, Gary W.

AU - Neudeck, Philip G.

AU - Gray, M.

AU - Androjna, D.

AU - Chen, Liang Yu

AU - Hoffman, Richard W.

AU - Liu, C. C.

AU - Wu, Q. H.

PY - 2000

Y1 - 2000

N2 - Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

AB - Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0343006655&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0343006655

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

SiC-based gas sensor development

Abstract

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