Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

Q. Y. Tong; T. H. Lee; L. J. Huang; Y. L. Chao; U. Gösele

doi:10.1049/el:19980295

Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

Q. Y. Tong, T. H. Lee, L. J. Huang, Y. L. Chao, U. Gösele

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H0-implantation temperatures.

Original language	English
Pages (from-to)	407-408
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1049/el:19980295
State	Published - 19 Feb 1998

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title = "Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting",

abstract = "High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H0-implantation temperatures.",

author = "Tong, {Q. Y.} and Lee, {T. H.} and Huang, {L. J.} and Chao, {Y. L.} and U. G{\"o}sele",

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T1 - Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

AU - Tong, Q. Y.

AU - Lee, T. H.

AU - Huang, L. J.

AU - Chao, Y. L.

AU - Gösele, U.

PY - 1998/2/19

Y1 - 1998/2/19

N2 - High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H0-implantation temperatures.

AB - High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H0-implantation temperatures.

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U2 - 10.1049/el:19980295

DO - 10.1049/el:19980295

M3 - 期刊論文

AN - SCOPUS:0032545834

SN - 0013-5194

VL - 34

SP - 407

EP - 408

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

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