Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation

J. W. Shi; Y. S. Wu; F. C. Hong; W. Y. Chiu

doi:10.1109/LED.2008.2000668

Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation

J. W. Shi, Y. S. Wu, F. C. Hong, W. Y. Chiu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In_0.52Al_0.48As-based multiplication layer in the In_0.53 Ga_0.47As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (>30 V) in our device to attain high-gain (> 1} × 10⁴ performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 10⁴) under a 6-V bias.

Original language	English
Pages (from-to)	714-717
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	7
DOIs	https://doi.org/10.1109/LED.2008.2000668
State	Published - Jul 2008

Keywords

Photodetector
Phototransistor

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10.1109/LED.2008.2000668

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@article{7e10efc32fc14b6b84edff0d64739b1f,

title = "Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation",

abstract = "We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In0.52Al0.48As-based multiplication layer in the In0.53 Ga0.47As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (>30 V) in our device to attain high-gain (> 1} × 104 performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 104) under a 6-V bias.",

keywords = "Photodetector, Phototransistor",

author = "Shi, {J. W.} and Wu, {Y. S.} and Hong, {F. C.} and Chiu, {W. Y.}",

year = "2008",

month = jul,

doi = "10.1109/LED.2008.2000668",

language = "???core.languages.en_GB???",

volume = "29",

pages = "714--717",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "7",

}

TY - JOUR

T1 - Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation

AU - Shi, J. W.

AU - Wu, Y. S.

AU - Hong, F. C.

AU - Chiu, W. Y.

PY - 2008/7

Y1 - 2008/7

N2 - We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In0.52Al0.48As-based multiplication layer in the In0.53 Ga0.47As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (>30 V) in our device to attain high-gain (> 1} × 104 performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 104) under a 6-V bias.

AB - We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In0.52Al0.48As-based multiplication layer in the In0.53 Ga0.47As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (>30 V) in our device to attain high-gain (> 1} × 104 performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 104) under a 6-V bias.

KW - Photodetector

KW - Phototransistor

UR - http://www.scopus.com/inward/record.url?scp=47249116215&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2000668

DO - 10.1109/LED.2008.2000668

M3 - 期刊論文

AN - SCOPUS:47249116215

SN - 0741-3106

VL - 29

SP - 714

EP - 717

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation

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Keywords

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