Separate absorption-charge multiplication heterojunction phototransistors with the bandwidth-enhancement effect and ultrahigh gain-bandwidth product under near avalanche operation

J. W. Shi, Y. S. Wu, F. C. Hong, W. Y. Chiu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In0.52Al0.48As-based multiplication layer in the In0.53 Ga0.47As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (>30 V) in our device to attain high-gain (> 1} × 104 performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 104) under a 6-V bias.

Original languageEnglish
Pages (from-to)714-717
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
StatePublished - Jul 2008

Keywords

  • Photodetector
  • Phototransistor

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