Semiconductor layer transfer by anodic wafer bonding

T. H. Lee, Q. Y. Ton, Y. L. Chao, L. J. Huang, U. Goesele

Research output: Contribution to conferencePaperpeer-review


Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.

Original languageEnglish
Number of pages2
StatePublished - 1997
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: 6 Oct 19979 Oct 1997


ConferenceProceedings of the 1997 IEEE International SOI Conference
CityFish Camp, CA, USA


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