Self-forming silicide/SiGe-based tube structure on Si(001) substrates

H. C. Chen, K. F. Liao, S. W. Lee, L. J. Chen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic suicide (NiSi2) may find applications in advanced devices.

Original languageEnglish
Pages (from-to)483-486
Number of pages4
JournalThin Solid Films
Issue numberSPEC. ISS.
StatePublished - 22 Dec 2004


  • Self-forming
  • SiGe
  • Silicide
  • Tube


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