Abstract
Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic suicide (NiSi2) may find applications in advanced devices.
Original language | English |
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Pages (from-to) | 483-486 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 469-470 |
Issue number | SPEC. ISS. |
DOIs | |
State | Published - 22 Dec 2004 |
Keywords
- Self-forming
- SiGe
- Silicide
- Tube