Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

Nien Tze Yeh, Jia Ming Lee, Tzer En Nee, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

Original languageEnglish
Pages (from-to)1123-1125
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number9
DOIs
StatePublished - Sep 2000

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