Self-aligned nanolenses with multilayered Ge/SiO2 core/shell structures on Si (001)

Huai Chung Chen; Sheng Wei Lee; Lih Juann Chen

doi:10.1002/adma.200600307

Self-aligned nanolenses with multilayered Ge/SiO₂ core/shell structures on Si (001)

Huai Chung Chen, Sheng Wei Lee, Lih Juann Chen

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A method was developed to fabricate multilayered Ge/SiO₂ core/shell nanostructures with a lenticular shape with excellent uniformity over a large area. It was observed that the dot-size uniformity improved and the average dot size increased as the number of multilayers increased. The self-assembled multilayered Ge-QD samples were etched in aqueous tetramethylammonium hydroxide (TMAH) solutions of different concentrations for various periods of time. The reflection spectra of the multilayers were measured using a Bomem Fourier transform infrared (FTIR) spectrometer. The samples with the Ge/SiO₂ nanolens stacks exhibited a reflectivity with an increase of about 77% at around 1.5μm above conventional self-assembled Ge-QD/Si-spacer multilayers. The combination of photoluminescence and reflectance properties of multilayered nanolenses means that they have potential for use as Si-compatible photodetector materials for telecommunications.

Original language	English
Pages (from-to)	222-226
Number of pages	5
Journal	Advanced Materials
Volume	19
Issue number	2
DOIs	https://doi.org/10.1002/adma.200600307
State	Published - 20 Jan 2007

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abstract = "A method was developed to fabricate multilayered Ge/SiO2 core/shell nanostructures with a lenticular shape with excellent uniformity over a large area. It was observed that the dot-size uniformity improved and the average dot size increased as the number of multilayers increased. The self-assembled multilayered Ge-QD samples were etched in aqueous tetramethylammonium hydroxide (TMAH) solutions of different concentrations for various periods of time. The reflection spectra of the multilayers were measured using a Bomem Fourier transform infrared (FTIR) spectrometer. The samples with the Ge/SiO2 nanolens stacks exhibited a reflectivity with an increase of about 77% at around 1.5μm above conventional self-assembled Ge-QD/Si-spacer multilayers. The combination of photoluminescence and reflectance properties of multilayered nanolenses means that they have potential for use as Si-compatible photodetector materials for telecommunications.",

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AU - Lee, Sheng Wei

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N2 - A method was developed to fabricate multilayered Ge/SiO2 core/shell nanostructures with a lenticular shape with excellent uniformity over a large area. It was observed that the dot-size uniformity improved and the average dot size increased as the number of multilayers increased. The self-assembled multilayered Ge-QD samples were etched in aqueous tetramethylammonium hydroxide (TMAH) solutions of different concentrations for various periods of time. The reflection spectra of the multilayers were measured using a Bomem Fourier transform infrared (FTIR) spectrometer. The samples with the Ge/SiO2 nanolens stacks exhibited a reflectivity with an increase of about 77% at around 1.5μm above conventional self-assembled Ge-QD/Si-spacer multilayers. The combination of photoluminescence and reflectance properties of multilayered nanolenses means that they have potential for use as Si-compatible photodetector materials for telecommunications.

AB - A method was developed to fabricate multilayered Ge/SiO2 core/shell nanostructures with a lenticular shape with excellent uniformity over a large area. It was observed that the dot-size uniformity improved and the average dot size increased as the number of multilayers increased. The self-assembled multilayered Ge-QD samples were etched in aqueous tetramethylammonium hydroxide (TMAH) solutions of different concentrations for various periods of time. The reflection spectra of the multilayers were measured using a Bomem Fourier transform infrared (FTIR) spectrometer. The samples with the Ge/SiO2 nanolens stacks exhibited a reflectivity with an increase of about 77% at around 1.5μm above conventional self-assembled Ge-QD/Si-spacer multilayers. The combination of photoluminescence and reflectance properties of multilayered nanolenses means that they have potential for use as Si-compatible photodetector materials for telecommunications.

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Self-aligned nanolenses with multilayered Ge/SiO2 core/shell structures on Si (001)

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Self-aligned nanolenses with multilayered Ge/SiO₂ core/shell structures on Si (001)