A method was developed to fabricate multilayered Ge/SiO2 core/shell nanostructures with a lenticular shape with excellent uniformity over a large area. It was observed that the dot-size uniformity improved and the average dot size increased as the number of multilayers increased. The self-assembled multilayered Ge-QD samples were etched in aqueous tetramethylammonium hydroxide (TMAH) solutions of different concentrations for various periods of time. The reflection spectra of the multilayers were measured using a Bomem Fourier transform infrared (FTIR) spectrometer. The samples with the Ge/SiO2 nanolens stacks exhibited a reflectivity with an increase of about 77% at around 1.5μm above conventional self-assembled Ge-QD/Si-spacer multilayers. The combination of photoluminescence and reflectance properties of multilayered nanolenses means that they have potential for use as Si-compatible photodetector materials for telecommunications.