Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm

Kian Giap Gan; Jin Wei Shi; Yi Jen Chiu; Chi Kuang Sun; J. E. Bowers

doi:10.1109/MWP.2002.981819

Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm

Kian Giap Gan, Jin Wei Shi, Yi Jen Chiu, Chi Kuang Sun, J. E. Bowers

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.

Original language	English
Title of host publication	2001 International Topical Meeting on Microwave Photonics, MWP 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	153-155
Number of pages	3
ISBN (Electronic)	0780370031, 9780780370036
DOIs	https://doi.org/10.1109/MWP.2002.981819
State	Published - 2001
Event	2001 International Topical Meeting on Microwave Photonics, MWP 2001 - Long Beach, United States Duration: 7 Jan 2002 → 9 Jan 2002

Publication series

Name	2001 International Topical Meeting on Microwave Photonics, MWP 2001
Volume	1

Conference

Conference	2001 International Topical Meeting on Microwave Photonics, MWP 2001
Country/Territory	United States
City	Long Beach
Period	7/01/02 → 9/01/02

Access to Document

10.1109/MWP.2002.981819

Cite this

Gan, K. G., Shi, J. W., Chiu, Y. J., Sun, C. K., & Bowers, J. E. (2001). Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm. In 2001 International Topical Meeting on Microwave Photonics, MWP 2001 (pp. 153-155). Article 981819 (2001 International Topical Meeting on Microwave Photonics, MWP 2001; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2002.981819

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title = "Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm",

abstract = "Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.",

author = "Gan, {Kian Giap} and Shi, {Jin Wei} and Chiu, {Yi Jen} and Sun, {Chi Kuang} and Bowers, {J. E.}",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 2001 International Topical Meeting on Microwave Photonics, MWP 2001 ; Conference date: 07-01-2002 Through 09-01-2002",

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doi = "10.1109/MWP.2002.981819",

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series = "2001 International Topical Meeting on Microwave Photonics, MWP 2001",

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Gan, KG, Shi, JW, Chiu, YJ, Sun, CK & Bowers, JE 2001, Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm. in 2001 International Topical Meeting on Microwave Photonics, MWP 2001., 981819, 2001 International Topical Meeting on Microwave Photonics, MWP 2001, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 153-155, 2001 International Topical Meeting on Microwave Photonics, MWP 2001, Long Beach, United States, 7/01/02. https://doi.org/10.1109/MWP.2002.981819

Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm. / Gan, Kian Giap; Shi, Jin Wei; Chiu, Yi Jen et al.
2001 International Topical Meeting on Microwave Photonics, MWP 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 153-155 981819 (2001 International Topical Meeting on Microwave Photonics, MWP 2001; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm

AU - Gan, Kian Giap

AU - Shi, Jin Wei

AU - Chiu, Yi Jen

AU - Sun, Chi Kuang

AU - Bowers, J. E.

PY - 2001

Y1 - 2001

N2 - Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.

AB - Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.

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T3 - 2001 International Topical Meeting on Microwave Photonics, MWP 2001

SP - 153

EP - 155

BT - 2001 International Topical Meeting on Microwave Photonics, MWP 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2001 International Topical Meeting on Microwave Photonics, MWP 2001

Y2 - 7 January 2002 through 9 January 2002

ER -

Gan KG, Shi JW, Chiu YJ, Sun CK, Bowers JE. Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm. In 2001 International Topical Meeting on Microwave Photonics, MWP 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 153-155. 981819. (2001 International Topical Meeting on Microwave Photonics, MWP 2001). doi: 10.1109/MWP.2002.981819

Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm

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