Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

C. H. Fu, Y. H. Lin, W. C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, P. Chang, M. H. Chen, W. J. Hsueh, S. H. Chen, G. J. Brown, J. I. Chyi, J. Kwo, M. Hong

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