Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

C. H. Fu, Y. H. Lin, W. C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, P. Chang, M. H. Chen, W. J. Hsueh, S. H. Chen, G. J. Brown, J. I. Chyi, J. Kwo, M. Hong

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Y2O3, as a common high κ gate dielectric, has been directly deposited on (In)GaAs, GaSb, and Ge using electron beam evaporation in ultra-high vacuum. These semiconductors have distinctly different chemical bonding and surface electronic characteristics. No interfacial passivation layer was employed. High-quality Y2O3/semiconductor interfaces have been achieved, resulting in low interfacial trap densities and high-temperature thermal stability, essential for the CMOS compatible process. Self-aligned inversion channel n-InGaAs, p-GaSb, and p-Ge MOSFETs have been fabricated with excellent device performances.

Original languageEnglish
Pages (from-to)330-334
Number of pages5
JournalMicroelectronic Engineering
Volume147
DOIs
StatePublished - 16 May 2015

Keywords

  • CMOS
  • Common gate stacks
  • GaSb
  • Ge
  • III-V
  • Rare earth oxide

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