Selenization of CIGS films with different Cu-In-Ga alloy precursors

Wei Ting Lin; Sheng Hui Chen; Shin Hao Chan; Chung Lun Hsieh; Sung Cheng Hu; Yung Tien Lu; Hsiang Chun Cheng

doi:10.1016/j.proeng.2012.03.008

Selenization of CIGS films with different Cu-In-Ga alloy precursors

Wei Ting Lin, Sheng Hui Chen, Shin Hao Chan, Chung Lun Hsieh, Sung Cheng Hu, Yung Tien Lu, Hsiang Chun Cheng

Department of Optics and Photonics

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu₁₁In₉ phase was increasing and CuIn₂ phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600°C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Procedia Engineering
Volume	36
DOIs	https://doi.org/10.1016/j.proeng.2012.03.008
State	Published - 2012
Event	2011 IUMRS International Conference in Asia, ICA 2011 - Taipei, Taiwan Duration: 19 Sep 2011 → 22 Sep 2011

Keywords

CIGS
Diffusion
Phase-transition
Precursor
Selenization

Access to Document

10.1016/j.proeng.2012.03.008

Cite this

@article{c11a6c93acae407d961cf8d2db14e0f0,

title = "Selenization of CIGS films with different Cu-In-Ga alloy precursors",

abstract = "CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu11In9 phase was increasing and CuIn2 phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600°C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.",

keywords = "CIGS, Diffusion, Phase-transition, Precursor, Selenization",

author = "Lin, {Wei Ting} and Chen, {Sheng Hui} and Chan, {Shin Hao} and Hsieh, {Chung Lun} and Hu, {Sung Cheng} and Lu, {Yung Tien} and Cheng, {Hsiang Chun}",

note = "Funding Information: The authors are grateful to Chung-Shan Institute of Science and Technology and National Science Council of Taiwan, ROC for supporting of this research under the Contract No. NSC 100-2221-E-008 -111.; 2011 IUMRS International Conference in Asia, ICA 2011 ; Conference date: 19-09-2011 Through 22-09-2011",

year = "2012",

doi = "10.1016/j.proeng.2012.03.008",

language = "???core.languages.en_GB???",

volume = "36",

pages = "41--45",

journal = "Procedia Engineering",

issn = "1877-7058",

}

TY - JOUR

T1 - Selenization of CIGS films with different Cu-In-Ga alloy precursors

AU - Lin, Wei Ting

AU - Chen, Sheng Hui

AU - Chan, Shin Hao

AU - Hsieh, Chung Lun

AU - Hu, Sung Cheng

AU - Lu, Yung Tien

AU - Cheng, Hsiang Chun

N1 - Funding Information: The authors are grateful to Chung-Shan Institute of Science and Technology and National Science Council of Taiwan, ROC for supporting of this research under the Contract No. NSC 100-2221-E-008 -111.

PY - 2012

Y1 - 2012

N2 - CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu11In9 phase was increasing and CuIn2 phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600°C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.

AB - CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu11In9 phase was increasing and CuIn2 phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600°C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.

KW - CIGS

KW - Diffusion

KW - Phase-transition

KW - Precursor

KW - Selenization

UR - http://www.scopus.com/inward/record.url?scp=84892587052&partnerID=8YFLogxK

U2 - 10.1016/j.proeng.2012.03.008

DO - 10.1016/j.proeng.2012.03.008

M3 - 會議論文

AN - SCOPUS:84892587052

SN - 1877-7058

VL - 36

SP - 41

EP - 45

JO - Procedia Engineering

JF - Procedia Engineering

T2 - 2011 IUMRS International Conference in Asia, ICA 2011

Y2 - 19 September 2011 through 22 September 2011

ER -

Selenization of CIGS films with different Cu-In-Ga alloy precursors

Abstract

Keywords

Access to Document

Fingerprint

Cite this