Selenization of CIGS films with different Cu-In-Ga alloy precursors

Wei Ting Lin, Sheng Hui Chen, Shin Hao Chan, Chung Lun Hsieh, Sung Cheng Hu, Yung Tien Lu, Hsiang Chun Cheng

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu11In9 phase was increasing and CuIn2 phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600°C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.

Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalProcedia Engineering
StatePublished - 2012
Event2011 IUMRS International Conference in Asia, ICA 2011 - Taipei, Taiwan
Duration: 19 Sep 201122 Sep 2011


  • CIGS
  • Diffusion
  • Phase-transition
  • Precursor
  • Selenization


Dive into the research topics of 'Selenization of CIGS films with different Cu-In-Ga alloy precursors'. Together they form a unique fingerprint.

Cite this