Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

N. Y. Li; Y. M. Hsin; H. K. Dong; T. Nakamura; P. M. Asbeck; C. W. Tu

doi:10.1016/0022-0248(95)80273-F

Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

N. Y. Li, Y. M. Hsin, H. K. Dong, T. Nakamura, P. M. Asbeck, C. W. Tu

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) on (100) GaAs substrates patterned with SiO₂ has been studied. Triethylgallium, trimethylaluminum, tris-dimethylaminoarsenic (TDMAAs) and diiodomethane were used as precursors. True selectivity of GaAs and AlGaAs with a growth rate of 0.5 μm/h is achieved at a growth temperature as low as 470°C. A flat GaAs regrown surface can be obtained, however, only by thermally cracking the TDMAAs source at 350°C. The growth rate of GaAs:C layers is independent of the stripe openings down to about 5 μm. A growth rate enhancement is observed when the feature size is less than 5 μm. The “rabbit ear” thickness can be significantly reduced if the stripe opening is less than 5 μm or if theV/III incorporation ratio is low. A heterojunction bipolar transistor (HBT) with selectively regrown GaAs/AlGaAs:C external base layers has been successfully fabricated. It exhibits at least a 60% improvement in the base sheet resistance compared to the original HBT structure, demonstrating the potential of selective-area growth by CBE.

Original language	English
Pages (from-to)	562-567
Number of pages	6
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80273-F
State	Published - 1995

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title = "Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources",

abstract = "Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) on (100) GaAs substrates patterned with SiO2 has been studied. Triethylgallium, trimethylaluminum, tris-dimethylaminoarsenic (TDMAAs) and diiodomethane were used as precursors. True selectivity of GaAs and AlGaAs with a growth rate of 0.5 μm/h is achieved at a growth temperature as low as 470°C. A flat GaAs regrown surface can be obtained, however, only by thermally cracking the TDMAAs source at 350°C. The growth rate of GaAs:C layers is independent of the stripe openings down to about 5 μm. A growth rate enhancement is observed when the feature size is less than 5 μm. The “rabbit ear” thickness can be significantly reduced if the stripe opening is less than 5 μm or if theV/III incorporation ratio is low. A heterojunction bipolar transistor (HBT) with selectively regrown GaAs/AlGaAs:C external base layers has been successfully fabricated. It exhibits at least a 60% improvement in the base sheet resistance compared to the original HBT structure, demonstrating the potential of selective-area growth by CBE.",

author = "Li, {N. Y.} and Hsin, {Y. M.} and Dong, {H. K.} and T. Nakamura and Asbeck, {P. M.} and Tu, {C. W.}",

year = "1995",

doi = "10.1016/0022-0248(95)80273-F",

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volume = "150",

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T1 - Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

AU - Li, N. Y.

AU - Hsin, Y. M.

AU - Dong, H. K.

AU - Nakamura, T.

AU - Asbeck, P. M.

AU - Tu, C. W.

PY - 1995

Y1 - 1995

N2 - Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) on (100) GaAs substrates patterned with SiO2 has been studied. Triethylgallium, trimethylaluminum, tris-dimethylaminoarsenic (TDMAAs) and diiodomethane were used as precursors. True selectivity of GaAs and AlGaAs with a growth rate of 0.5 μm/h is achieved at a growth temperature as low as 470°C. A flat GaAs regrown surface can be obtained, however, only by thermally cracking the TDMAAs source at 350°C. The growth rate of GaAs:C layers is independent of the stripe openings down to about 5 μm. A growth rate enhancement is observed when the feature size is less than 5 μm. The “rabbit ear” thickness can be significantly reduced if the stripe opening is less than 5 μm or if theV/III incorporation ratio is low. A heterojunction bipolar transistor (HBT) with selectively regrown GaAs/AlGaAs:C external base layers has been successfully fabricated. It exhibits at least a 60% improvement in the base sheet resistance compared to the original HBT structure, demonstrating the potential of selective-area growth by CBE.

AB - Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) on (100) GaAs substrates patterned with SiO2 has been studied. Triethylgallium, trimethylaluminum, tris-dimethylaminoarsenic (TDMAAs) and diiodomethane were used as precursors. True selectivity of GaAs and AlGaAs with a growth rate of 0.5 μm/h is achieved at a growth temperature as low as 470°C. A flat GaAs regrown surface can be obtained, however, only by thermally cracking the TDMAAs source at 350°C. The growth rate of GaAs:C layers is independent of the stripe openings down to about 5 μm. A growth rate enhancement is observed when the feature size is less than 5 μm. The “rabbit ear” thickness can be significantly reduced if the stripe opening is less than 5 μm or if theV/III incorporation ratio is low. A heterojunction bipolar transistor (HBT) with selectively regrown GaAs/AlGaAs:C external base layers has been successfully fabricated. It exhibits at least a 60% improvement in the base sheet resistance compared to the original HBT structure, demonstrating the potential of selective-area growth by CBE.

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U2 - 10.1016/0022-0248(95)80273-F

DO - 10.1016/0022-0248(95)80273-F

M3 - 期刊論文

AN - SCOPUS:0029304455

SN - 0022-0248

VL - 150

SP - 562

EP - 567

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

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