Selective Growth of WSe2 with Graphene Contacts

Yu Ting Lin; Xin Quan Zhang; Po Han Chen; Chong Chi Chi; Erh Chen Lin; Jian Guo Rong; Chuenhou Ouyang; Yung Fu Chen; Yi Hsien Lee

doi:10.1186/s11671-020-3261-y

Selective Growth of WSe₂ with Graphene Contacts

Yu Ting Lin, Xin Quan Zhang, Po Han Chen, Chong Chi Chi, Erh Chen Lin, Jian Guo Rong, Chuenhou Ouyang, Yung Fu Chen, Yi Hsien Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe₂) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe₂ growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe₂ growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe₂-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe₂-graphene are presented.

Original language	English
Article number	61
Journal	Nanoscale Research Letters
Volume	15
Issue number	1
DOIs	https://doi.org/10.1186/s11671-020-3261-y
State	Published - 2020

Keywords

Contacts
Electronics
Heterostructures
Interfaces
WSe

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10.1186/s11671-020-3261-y

Selective Growth of WSe2 with Graphene Contacts
Lin, Y. (Creator), Zhang, X. (Creator), Chen, P. (Contributor), Chi, C. (Contributor), Lin, E. (Creator), Rong, J. (Creator), Ouyang, C. (Contributor), Chen, Y. (Contributor) & Lee, Y. (Contributor), figshare, 2020
DOI: 10.6084/m9.figshare.c.4892670, https://springernature.figshare.com/collections/Selective_Growth_of_WSe2_with_Graphene_Contacts/4892670
Dataset
Selective Growth of WSe2 with Graphene Contacts
Lin, Y. (Creator), Zhang, X. (Creator), Chen, P. (Contributor), Chi, C. (Contributor), Lin, E. (Creator), Rong, J. (Creator), Ouyang, C. (Contributor), Chen, Y. (Contributor) & Lee, Y. (Contributor), figshare, 2020
DOI: 10.6084/m9.figshare.c.4892670.v1, https://springernature.figshare.com/collections/Selective_Growth_of_WSe2_with_Graphene_Contacts/4892670/1
Dataset
Additional file 1 of Selective Growth of WSe2 with Graphene Contacts
Lin, Y. (Creator), Zhang, X. (Creator), Chen, P. (Contributor), Chi, C. (Contributor), Lin, E. (Creator), Rong, J. (Creator), Ouyang, C. (Contributor), Chen, Y. (Contributor) & Lee, Y. (Contributor), figshare, 2020
DOI: 10.6084/m9.figshare.11978703.v1, https://doi.org/10.6084%2Fm9.figshare.11978703.v1
Dataset

Cite this

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title = "Selective Growth of WSe2 with Graphene Contacts",

abstract = "Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe2) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe2 growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe2 growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe2-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe2-graphene are presented.",

keywords = "Contacts, Electronics, Heterostructures, Interfaces, WSe",

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T1 - Selective Growth of WSe2 with Graphene Contacts

AU - Lin, Yu Ting

AU - Zhang, Xin Quan

AU - Chen, Po Han

AU - Chi, Chong Chi

AU - Lin, Erh Chen

AU - Rong, Jian Guo

AU - Ouyang, Chuenhou

AU - Chen, Yung Fu

AU - Lee, Yi Hsien

PY - 2020

Y1 - 2020

N2 - Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe2) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe2 growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe2 growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe2-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe2-graphene are presented.

AB - Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe2) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe2 growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe2 growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe2-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe2-graphene are presented.

KW - Contacts

KW - Electronics

KW - Heterostructures

KW - Interfaces

KW - WSe

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DO - 10.1186/s11671-020-3261-y

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VL - 15

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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ER -

Selective Growth of WSe2 with Graphene Contacts

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