Selective Growth of WSe2 with Graphene Contacts

Yu Ting Lin, Xin Quan Zhang, Po Han Chen, Chong Chi Chi, Erh Chen Lin, Jian Guo Rong, Chuenhou Ouyang, Yung Fu Chen, Yi Hsien Lee

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5 Scopus citations


Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe2) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe2 growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe2 growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe2-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe2-graphene are presented.

Original languageEnglish
Article number61
JournalNanoscale Research Letters
Issue number1
StatePublished - 2020


  • Contacts
  • Electronics
  • Heterostructures
  • Interfaces
  • WSe


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