Selective growth of InAs quantum dots on patterned GaAs

Tung Po Hsieh, Pei Chin Chiu, Yu Chuan Liu, Nien Tze Yeh, Wen Jeng Ho, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report selective growth of InAs self-assembled quantum dots (QDs) on nano-ridges (30-50 nm) formed by wet chemical etching and epitaxial growth processes. The QDs formed on the ridges exhibit distinctive characteristics from those on the planar region between the ridges in terms of physical shape as well as optical property. The QDs, which align one by one on the top of the ridges, are of an asymmetric shape along the [011] and [0 1_ 1] directions. By defining the width of ridge and the monolayers of QDs, we are able to control the height and the width of these QDs. Compared to the QDs on the planar region between the ridges, the luminescence from QDs on the ridges exhibits a shorter wavelength, which is attributed to higher compressive strain in these QDs.

Original languageEnglish
Pages (from-to)262-266
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - 2005


Dive into the research topics of 'Selective growth of InAs quantum dots on patterned GaAs'. Together they form a unique fingerprint.

Cite this