Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

M. N. Chang; N. T. Yeh; C. M. Lu; K. C. Hsieh; J. I. Chyi

doi:10.1063/1.124274

Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

M. N. Chang, N. T. Yeh, C. M. Lu, K. C. Hsieh, J. I. Chyi

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Abstract

The arsenic precipitation in doped arsenic-related heterostructures grown at low temperature by molecular beam epitaxy was studied. For doped heterostructures, both doping and bond strength influence the arsenic precipitation upon annealing. Arsenic precipitates are observed in the GaAs region of GaAs/Al_0.3Ga_0.7As multiple quantum wells, no matter what the doping type is in each layer.

Original language	English
Pages (from-to)	52-54
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	1
DOIs	https://doi.org/10.1063/1.124274
State	Published - 5 Jul 1999

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title = "Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures",

abstract = "The arsenic precipitation in doped arsenic-related heterostructures grown at low temperature by molecular beam epitaxy was studied. For doped heterostructures, both doping and bond strength influence the arsenic precipitation upon annealing. Arsenic precipitates are observed in the GaAs region of GaAs/Al0.3Ga0.7As multiple quantum wells, no matter what the doping type is in each layer.",

author = "Chang, {M. N.} and Yeh, {N. T.} and Lu, {C. M.} and Hsieh, {K. C.} and Chyi, {J. I.}",

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T1 - Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

AU - Chang, M. N.

AU - Yeh, N. T.

AU - Lu, C. M.

AU - Hsieh, K. C.

AU - Chyi, J. I.

PY - 1999/7/5

Y1 - 1999/7/5

N2 - The arsenic precipitation in doped arsenic-related heterostructures grown at low temperature by molecular beam epitaxy was studied. For doped heterostructures, both doping and bond strength influence the arsenic precipitation upon annealing. Arsenic precipitates are observed in the GaAs region of GaAs/Al0.3Ga0.7As multiple quantum wells, no matter what the doping type is in each layer.

AB - The arsenic precipitation in doped arsenic-related heterostructures grown at low temperature by molecular beam epitaxy was studied. For doped heterostructures, both doping and bond strength influence the arsenic precipitation upon annealing. Arsenic precipitates are observed in the GaAs region of GaAs/Al0.3Ga0.7As multiple quantum wells, no matter what the doping type is in each layer.

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U2 - 10.1063/1.124274

DO - 10.1063/1.124274

M3 - 期刊論文

AN - SCOPUS:0032620414

SN - 0003-6951

VL - 75

SP - 52

EP - 54

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

Abstract

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