Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

N. Y. Li, H. K. Dong, Y. M. Hsin, T. Nakamura, P. M. Asbeck, C. W. Tu

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Selective-area epitaxy (SAE) of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic is investigated. Orientation of the growth front can significantly affect the growth rate of the regrown layers, resulting in facet formation around the mask. Moreover, the facets can be varied by adjusting the V/III ratio. For stripes along the [011̄] direction, the growth rate of (110) and (111)A planes is lowest when the V/III ratio is close to 1, resulting in lateral growth. This lateral growth has been exploited to fabricate heterojunction bipolar transistors (HBTs) with selectively regrown GaAs/AlGaAs:C external base layers. These HBTs exhibit a 62% reduction in the base sheet resistance and a higher current gain, compared to the original HBT structure. No degradation of the current gain is found after regrowth, demonstrating the great potential of SAE by CBE.

Original languageEnglish
Pages (from-to)664-666
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number2
StatePublished - Mar 1995
EventProceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA
Duration: 10 Oct 199412 Oct 1994


Dive into the research topics of 'Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy'. Together they form a unique fingerprint.

Cite this