Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

N. Y. Li; H. K. Dong; Y. M. Hsin; T. Nakamura; P. M. Asbeck; C. W. Tu

doi:10.1116/1.587936

Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

N. Y. Li, H. K. Dong, Y. M. Hsin, T. Nakamura, P. M. Asbeck, C. W. Tu

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Selective-area epitaxy (SAE) of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic is investigated. Orientation of the growth front can significantly affect the growth rate of the regrown layers, resulting in facet formation around the mask. Moreover, the facets can be varied by adjusting the V/III ratio. For stripes along the [011̄] direction, the growth rate of (110) and (111)A planes is lowest when the V/III ratio is close to 1, resulting in lateral growth. This lateral growth has been exploited to fabricate heterojunction bipolar transistors (HBTs) with selectively regrown GaAs/AlGaAs:C external base layers. These HBTs exhibit a 62% reduction in the base sheet resistance and a higher current gain, compared to the original HBT structure. No degradation of the current gain is found after regrowth, demonstrating the great potential of SAE by CBE.

Original language	English
Pages (from-to)	664-666
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	2
DOIs	https://doi.org/10.1116/1.587936
State	Published - Mar 1995
Event	Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA Duration: 10 Oct 1994 → 12 Oct 1994

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title = "Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy",

abstract = "Selective-area epitaxy (SAE) of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic is investigated. Orientation of the growth front can significantly affect the growth rate of the regrown layers, resulting in facet formation around the mask. Moreover, the facets can be varied by adjusting the V/III ratio. For stripes along the [01{\=1}] direction, the growth rate of (110) and (111)A planes is lowest when the V/III ratio is close to 1, resulting in lateral growth. This lateral growth has been exploited to fabricate heterojunction bipolar transistors (HBTs) with selectively regrown GaAs/AlGaAs:C external base layers. These HBTs exhibit a 62% reduction in the base sheet resistance and a higher current gain, compared to the original HBT structure. No degradation of the current gain is found after regrowth, demonstrating the great potential of SAE by CBE.",

author = "Li, {N. Y.} and Dong, {H. K.} and Hsin, {Y. M.} and T. Nakamura and Asbeck, {P. M.} and Tu, {C. W.}",

year = "1995",

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volume = "13",

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TY - JOUR

T1 - Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

AU - Li, N. Y.

AU - Dong, H. K.

AU - Hsin, Y. M.

AU - Nakamura, T.

AU - Asbeck, P. M.

AU - Tu, C. W.

PY - 1995/3

Y1 - 1995/3

N2 - Selective-area epitaxy (SAE) of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic is investigated. Orientation of the growth front can significantly affect the growth rate of the regrown layers, resulting in facet formation around the mask. Moreover, the facets can be varied by adjusting the V/III ratio. For stripes along the [011̄] direction, the growth rate of (110) and (111)A planes is lowest when the V/III ratio is close to 1, resulting in lateral growth. This lateral growth has been exploited to fabricate heterojunction bipolar transistors (HBTs) with selectively regrown GaAs/AlGaAs:C external base layers. These HBTs exhibit a 62% reduction in the base sheet resistance and a higher current gain, compared to the original HBT structure. No degradation of the current gain is found after regrowth, demonstrating the great potential of SAE by CBE.

AB - Selective-area epitaxy (SAE) of carbon-doped (Al)GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic is investigated. Orientation of the growth front can significantly affect the growth rate of the regrown layers, resulting in facet formation around the mask. Moreover, the facets can be varied by adjusting the V/III ratio. For stripes along the [011̄] direction, the growth rate of (110) and (111)A planes is lowest when the V/III ratio is close to 1, resulting in lateral growth. This lateral growth has been exploited to fabricate heterojunction bipolar transistors (HBTs) with selectively regrown GaAs/AlGaAs:C external base layers. These HBTs exhibit a 62% reduction in the base sheet resistance and a higher current gain, compared to the original HBT structure. No degradation of the current gain is found after regrowth, demonstrating the great potential of SAE by CBE.

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U2 - 10.1116/1.587936

DO - 10.1116/1.587936

M3 - 會議論文

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SN - 0734-211X

VL - 13

SP - 664

EP - 666

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

T2 - Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy

Y2 - 10 October 1994 through 12 October 1994

ER -

Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

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