Schottky rectifiers fabricated on free-standing GaN substrates

J. W. Johnson, J. R. LaRoch, F. Ren, B. P. Gila, M. E. Overberg, C. R. Abernathy, J. I. Chyi, C. C. Chuo, T. E. Nee, C. M. Lee, K. P. Lee, S. S. Park, Y. J. Park, S. J. Pearton

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36 Scopus citations

Abstract

GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C. Reverse recovery was complete in <600 ns, with a characteristic time constant of ∼163 ns. The temperature coefficient for reverse breakdown voltage (VB) was -2.5 ± 0.6 V K-1 which is much lower than for lateral rectifiers reported previously, where values up to -30 V K-1 were achieved. Reverse currents increased with rectifying contact diameter and VB decreased with increasing contact size. The best on-state resistance was 20.5 mΩcm-2 for diodes with VB = 450 V, producing a figure-of-merit (VB)2/RON of ∼10 MW cm-2.

Original languageEnglish
Pages (from-to)405-410
Number of pages6
JournalSolid-State Electronics
Volume45
Issue number3
DOIs
StatePublished - Mar 2001

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