Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

J. I. Chyi; J. L. Shieh; R. J. Lin; J. W. Pan; R. M. Lin

doi:10.1063/1.359545

Schottky barrier heights of In_xAl_1-xAs (0≤x≤0.35) epilayers on GaAs

J. I. Chyi, J. L. Shieh, R. J. Lin, J. W. Pan, R. M. Lin

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5 Scopus citations

Abstract

The electrical characteristics of Al Schottky diodes on n-type In _xAl_1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

Original language	English
Pages (from-to)	1813-1815
Number of pages	3
Journal	Journal of Applied Physics
Volume	77
Issue number	4
DOIs	https://doi.org/10.1063/1.359545
State	Published - 1995

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@article{ef5d5110db9a4c4c85fe5f53b47be1c9,

title = "Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs",

abstract = "The electrical characteristics of Al Schottky diodes on n-type In xAl1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.",

author = "Chyi, {J. I.} and Shieh, {J. L.} and Lin, {R. J.} and Pan, {J. W.} and Lin, {R. M.}",

year = "1995",

doi = "10.1063/1.359545",

language = "???core.languages.en_GB???",

volume = "77",

pages = "1813--1815",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "4",

}

TY - JOUR

T1 - Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

AU - Chyi, J. I.

AU - Shieh, J. L.

AU - Lin, R. J.

AU - Pan, J. W.

AU - Lin, R. M.

PY - 1995

Y1 - 1995

N2 - The electrical characteristics of Al Schottky diodes on n-type In xAl1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

AB - The electrical characteristics of Al Schottky diodes on n-type In xAl1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

UR - http://www.scopus.com/inward/record.url?scp=0344110123&partnerID=8YFLogxK

U2 - 10.1063/1.359545

DO - 10.1063/1.359545

M3 - 期刊論文

AN - SCOPUS:0344110123

SN - 0021-8979

VL - 77

SP - 1813

EP - 1815

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

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Schottky barrier heights of In_xAl_1-xAs (0≤x≤0.35) epilayers on GaAs