Scaling effect Of GaAs pHEMTs small signal and noise model

S. C. Huang, W. Y. Lin, Y. M. Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, small-signal and noise model with gate-width scaling of GaAs pseudomorphic high electron mobility transistors (pHEMT) are presented. The scaling effect of the model parameters are derived from an accurate small-signal and noise equivalent circuit model for the different gate widths of pHEMTs. The experimental and model results show that noise coefficients are not dependant on the gate width while devices biasing at the same current density.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages305-308
Number of pages4
DOIs
StatePublished - 2009
Event20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy
Duration: 14 Jun 200919 Jun 2009

Publication series

NameAIP Conference Proceedings
Volume1129
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference20th International Conference on Noise and Fluctuations, ICNF 2009
Country/TerritoryItaly
CityPisa
Period14/06/0919/06/09

Keywords

  • Model
  • Nnoise
  • pHEMT
  • Scaling

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