Sb-based semiconductors for low power electronics

Nien Tze Yeh, Pei Chin Chiu, Jen Inn Chyi, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.

Original languageEnglish
Pages (from-to)4616-4627
Number of pages12
JournalJournal of Materials Chemistry C
Volume1
Issue number31
DOIs
StatePublished - 18 Jul 2013

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