Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

W. T. Lai; P. W. Li; David M.T. Kuo

doi:10.1109/istdm.2006.246510

Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

W. T. Lai, P. W. Li, David M.T. Kuo

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publisher	IEEE Computer Society
ISBN (Print)	1424404614, 9781424404612
DOIs	https://doi.org/10.1109/istdm.2006.246510
State	Published - 2006
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 15 May 2006 → 17 May 2006

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Conference

Conference	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	15/05/06 → 17/05/06

Access to Document

10.1109/istdm.2006.246510

Cite this

Lai, W. T., Li, P. W., & Kuo, D. M. T. (2006). Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest Article 1716004 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246510

Lai, W. T. ; Li, P. W. ; Kuo, David M.T. / Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

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title = "Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors",

author = "Lai, {W. T.} and Li, {P. W.} and Kuo, {David M.T.}",

year = "2006",

doi = "10.1109/istdm.2006.246510",

language = "???core.languages.en_GB???",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

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booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

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Lai, WT, Li, PW & Kuo, DMT 2006, Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1716004, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, IEEE Computer Society, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 15/05/06. https://doi.org/10.1109/istdm.2006.246510

Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. / Lai, W. T.; Li, P. W.; Kuo, David M.T.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. 1716004 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

AU - Lai, W. T.

AU - Li, P. W.

AU - Kuo, David M.T.

PY - 2006

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M3 - 會議論文篇章

AN - SCOPUS:34247484946

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

PB - IEEE Computer Society

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006

ER -

Lai WT, Li PW, Kuo DMT. Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society. 2006. 1716004. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest). doi: 10.1109/istdm.2006.246510