Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Shih Yen Lin; Chi Che Tseng; Wei Hsun Lin; Shu Cheng Mai; Shung Yi Wu; Shu Han Chen; Jen Inn Chyi

doi:10.1063/1.3371803

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Shih Yen Lin
, Chi Che Tseng
, Wei Hsun Lin
, Shu Cheng Mai
, Shung Yi Wu
, Shu Han Chen
, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.

Original language	English
Article number	123503
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3371803
State	Published - 2010

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title = "Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode",

abstract = "A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.",

author = "Lin, \{Shih Yen\} and Tseng, \{Chi Che\} and Lin, \{Wei Hsun\} and Mai, \{Shu Cheng\} and Wu, \{Shung Yi\} and Chen, \{Shu Han\} and Chyi, \{Jen Inn\}",

note = "Funding Information: This work was supported in part by the National Science Council, Taiwan under Grant Nos. NSC 98-2221-E-001-001 and NSC 99-2911-I-001-010.",

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doi = "10.1063/1.3371803",

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volume = "96",

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TY - JOUR

T1 - Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

AU - Lin, Shih Yen

AU - Tseng, Chi Che

AU - Lin, Wei Hsun

AU - Mai, Shu Cheng

AU - Wu, Shung Yi

AU - Chen, Shu Han

AU - Chyi, Jen Inn

N1 - Funding Information: This work was supported in part by the National Science Council, Taiwan under Grant Nos. NSC 98-2221-E-001-001 and NSC 99-2911-I-001-010.

PY - 2010

Y1 - 2010

N2 - A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.

AB - A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.

UR - https://www.scopus.com/pages/publications/77950337004

U2 - 10.1063/1.3371803

DO - 10.1063/1.3371803

M3 - 期刊論文

AN - SCOPUS:77950337004

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123503

ER -

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

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