Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Chi Che Tseng, Shih Yen Lin, Wei Hsun Lin, Shu Cheng Mai, Shung Yi Wu, Shu Han Chen, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blue shift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs hetero-structures. Significant electroluminescence is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blue shift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages374-376
Number of pages3
DOIs
StatePublished - 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/TerritoryJapan
CityKagawa
Period31/05/104/06/10

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