Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Shih Yen Lin, Chi Che Tseng, Wei Hsun Lin, Shu Cheng Mai, Shung Yi Wu, Shu Han Chen, Jen Inn Chyi

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A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.

Original languageEnglish
Article number123503
JournalApplied Physics Letters
Issue number12
StatePublished - 2010


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