Role of Fe-Doping Effect in 2-D MoS2 Magnetic Semiconductor

Cheng Wei Kao, Chun Chuen Yang, Hao Che Kao, Yung Hsiang Tung, Ting Wei Hsu, Wei Chun Wu, Kuen Song Lin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Two 2-D Mo1-xFexS2 (x = 0, 0.01) nanosheets were fabricated by the hydrothermal method. X-ray diffraction shows both samples are formed in hexagonal P63/mmc (2H structure) phase with 2-D morphology. Raman spectra displayed that the peak widths were broadening in the iron-doped sample. AC conductivity experiments revealed that both samples obeyed the small polaron hopping model. The activation energies ofx = 0$ are 0.121(3) and 0.066(1) eV above and below 200 K. Similarly, two different activation energies, 0.140(2) and 0.082(1) eV above and below 240 K are also found inx = 0.01 sample. The effect of iron-doped may raise the activation energies of small polaron. Diamagnetism and paramagnetism were observed in pure MoS2 and iron-doped sample, respectively. Magnetic hysteresis experiments show no loop in both samples, which is evidence that there was not any magnetic domain formed. Forx = 0.01 sample, the Brillouin function is conducted to fit the M-H curve. The fit< μ z> of thex = 0.01 sample is about 0.038(1) μ B/f. u., which matched the value of 1% Fe4+ (S = 2) ion-doped.

Original languageEnglish
Article number8359383
JournalIEEE Transactions on Magnetics
Volume54
Issue number11
DOIs
StatePublished - Nov 2018

Keywords

  • 2-D
  • MoS
  • magnetic
  • nano
  • semiconductor

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