Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

Kuan Kan Hu, Shin Yang Liang, Wei Yen Woon

Research output: Contribution to journalArticlepeer-review

Abstract

Solid-phase-epitaxial-regrowth (SPER) dynamics of ion-implanted silicon were studied through in situ time-resolved reflectivity measurements. The roles of strain induced by dopant and isovalent impurities with different atomic sizes were disentangled by considering the actual Fermi-level shifting and effective strain induced by partial impurities, as obtained from Hall measurements and high-resolution X-ray diffraction. Contrary to in the previous model, SPER rate retardation was found in the cases of both isovalent-impurity-induced tensile and compressive strain. We propose a modified model incorporating strain into generalized Fermi-level shifting to inclusively explain the SPER dynamics.

Original languageEnglish
Pages (from-to)21302
Number of pages1
JournalApplied Physics Express
Volume8
Issue number2
DOIs
StatePublished - 1 Feb 2015

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