Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs

Wen Bin Tang; Yue Ming Hsin

doi:10.1109/TDMR.2006.870345

Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs

Wen Bin Tang, Yue Ming Hsin

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The reversible breakdown walkout in the Si ₃N ₄ passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PFHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V _Bs) eventually reached "stable region" or "reverse region" depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.

Original language	English
Pages (from-to)	42-44
Number of pages	3
Journal	IEEE Transactions on Device and Materials Reliability
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2006.870345
State	Published - Mar 2006

Keywords

Breakdown walkout
Off-state breakdown
Passivation
Pseudomorphic high-electron mobility transistors (PHEMTs)

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10.1109/TDMR.2006.870345

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abstract = "The reversible breakdown walkout in the Si 3N 4 passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PFHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V Bs) eventually reached {"}stable region{"} or {"}reverse region{"} depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.",

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AU - Tang, Wen Bin

AU - Hsin, Yue Ming

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N2 - The reversible breakdown walkout in the Si 3N 4 passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PFHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V Bs) eventually reached "stable region" or "reverse region" depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.

AB - The reversible breakdown walkout in the Si 3N 4 passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PFHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V Bs) eventually reached "stable region" or "reverse region" depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.

KW - Breakdown walkout

KW - Off-state breakdown

KW - Passivation

KW - Pseudomorphic high-electron mobility transistors (PHEMTs)

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs

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Keywords

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