Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs

Wen Bin Tang, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The reversible breakdown walkout in the Si 3N 4 passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PFHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V Bs) eventually reached "stable region" or "reverse region" depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.

Original languageEnglish
Pages (from-to)42-44
Number of pages3
JournalIEEE Transactions on Device and Materials Reliability
Issue number1
StatePublished - Mar 2006


  • Breakdown walkout
  • Off-state breakdown
  • Passivation
  • Pseudomorphic high-electron mobility transistors (PHEMTs)


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