Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Akihiko Kikuchi; Ryo Bannai; Katsumi Kishino; Chia Ming Lee; Jen Inn Chyi

doi:10.1063/1.1622988

Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Akihiko Kikuchi
, Ryo Bannai
, Katsumi Kishino
, Chia Ming Lee
, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Review article › peer-review

19 Scopus citations

Abstract

A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.

Original language	English
Pages (from-to)	3628
Number of pages	1
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1622988
State	Published - 27 Oct 2003

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10.1063/1.1622988

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@article{632ab2a6d7774cd4b8069d58759f381d,

title = "Response to {"}Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'{"} [Appl. Phys. Lett. 83, 3626 (2003)]",

abstract = "A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.",

author = "Akihiko Kikuchi and Ryo Bannai and Katsumi Kishino and Lee, \{Chia Ming\} and Chyi, \{Jen Inn\}",

year = "2003",

month = oct,

day = "27",

doi = "10.1063/1.1622988",

language = "???core.languages.en\_GB???",

volume = "83",

pages = "3628",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "17",

}

TY - JOUR

T1 - Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

AU - Kikuchi, Akihiko

AU - Bannai, Ryo

AU - Kishino, Katsumi

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2003/10/27

Y1 - 2003/10/27

N2 - A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.

AB - A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.

UR - https://www.scopus.com/pages/publications/0345023548

U2 - 10.1063/1.1622988

DO - 10.1063/1.1622988

M3 - 回顧評介論文

AN - SCOPUS:0345023548

SN - 0003-6951

VL - 83

SP - 3628

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Abstract

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