Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Akihiko Kikuchi, Ryo Bannai, Katsumi Kishino, Chia Ming Lee, Jen Inn Chyi

Research output: Contribution to journalReview articlepeer-review

19 Scopus citations

Abstract

A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.

Original languageEnglish
Pages (from-to)3628
Number of pages1
JournalApplied Physics Letters
Volume83
Issue number17
DOIs
StatePublished - 27 Oct 2003

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