Abstract
A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.
Original language | English |
---|---|
Pages (from-to) | 3628 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 17 |
DOIs | |
State | Published - 27 Oct 2003 |