Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

M. S. Ünlü; K. Kishino; J. I. Chyi; L. Arsenault; J. Reed; S. Noor Mohammad; H. Morkoç

doi:10.1063/1.103410

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

M. S. Ünlü, K. Kishino, J. I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammad, H. Morkoç

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10^-8 A/cm ²) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

Original language	English
Pages (from-to)	750-752
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	8
DOIs	https://doi.org/10.1063/1.103410
State	Published - 1990

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title = "Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector",

abstract = "Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 {\AA} absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.",

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T1 - Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

AU - Ünlü, M. S.

AU - Kishino, K.

AU - Chyi, J. I.

AU - Arsenault, L.

AU - Reed, J.

AU - Mohammad, S. Noor

AU - Morkoç, H.

PY - 1990

Y1 - 1990

N2 - Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

AB - Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

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DO - 10.1063/1.103410

M3 - 期刊論文

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JF - Applied Physics Letters

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Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

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