Keyphrases
4H-SiC Wafer
50%
C-face
16%
Chemical Mechanical Polishing
16%
Conventional Machining
16%
Ductile Mode
33%
Experimental Sample
16%
High Efficiency
33%
High Material Removal Rate
16%
High Production
16%
High Surface Quality
16%
Hybrid Machining Process
100%
Hybrid Process
16%
Industrial Technology Research Institute
50%
Machining Process
16%
Machining Technology
16%
Material Removal Rate
33%
Modification Process
16%
Plasma Modification
16%
Plasma Polishing
33%
Polishing Process
100%
Processing Area
16%
Production Capacity
16%
Quality Production
16%
SiC Wafer
100%
Surface Polishing
100%
Surface Quality
16%
Taiwan
16%
Vibration-assisted
33%
Engineering
Chemical Mechanical Polishing
16%
Ductile Mode
33%
Experimental Result
16%
Hybrid Machining Process
100%
Hybrid Process
16%
Material Removal Rate
50%
Polishing Process
100%
Surface Quality
33%
Material Science
Chemical Mechanical Planarization
20%
Machining
100%
Polishing
40%
Surface (Surface Science)
100%
Surface Property
40%