@inproceedings{6cf6df391d6c44bda44cab7a69b2045e,
title = "Research of ZnS as a buffer layer for CIGS solar cells",
abstract = "Normally, CdS film is used as the buffer layer in the fabrication of copper indium gallium selenide solar cells. These solar cells can reach an efficiency of 10.3% when produced by a non-vacuum process. However, this is a very toxic process. In this study, we propose using a nontoxic zinc sulfide (ZnS) buffer layer which is deposited by chemical bath deposition. It took only 15 minutes to reach a ZnS thickness of 50nm and the transmittance of the finished device was higher than 80%. The back contact of the Mo layer sheet resistivity is 0.22 (Ω/square). The precursor solution for the cell fabrication was prepared from anhydrous hydrazine. The film was then deposited by spraying and finally heated rapidly to 520 without external selenization.",
keywords = "CIGS, ZnS, buffer layer",
author = "Huang, {Hsin Wei} and Chen, {Sheng Hui} and Lee, {Cheng Chung}",
year = "2010",
doi = "10.1117/12.860410",
language = "???core.languages.en_GB???",
isbn = "9780819482679",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Thin Film Solar Technology II",
note = "Thin Film Solar Technology II ; Conference date: 01-08-2010 Through 04-08-2010",
}