Abstract
We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.
| Original language | English |
|---|---|
| Article number | 020304 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 55 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2016 |
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