Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone

Jui Fen Chang; Wei Ren Chen; Yi Chien Lai; Fan Ching Chien

doi:10.7567/JJAP.55.020304

Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone

Jui Fen Chang, Wei Ren Chen, Yi Chien Lai, Fan Ching Chien

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.

Original language	English
Article number	020304
Journal	Japanese Journal of Applied Physics
Volume	55
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.55.020304
State	Published - Feb 2016

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title = "Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone",

abstract = "We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.",

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AU - Chen, Wei Ren

AU - Lai, Yi Chien

AU - Chien, Fan Ching

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Y1 - 2016/2

N2 - We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.

AB - We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.

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M3 - 期刊論文

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JO - Japanese Journal of Applied Physics

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Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone

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