Rapid thermal annealing of amorphous silicon thin films grown by electron cyclotron resonance chemical vapor deposition

Pei Yi Lin, Ping Jung Wu, I. Chen Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers by electron cyclotron resonance chemical vapor deposition (ECRCVD). The rapid thermal annealing (RTA) treatments were applied to the as-grown samples in nitrogen atmosphere, and the temperature range for the RTA process is from 450 to 950 °C. The crystallization and grain growth behaviors of the annealed films were investigated by Raman spectroscopy and X-ray diffraction (XRD). The onset temperature for the crystallization and grain growth is around 625 ∼ 650 °C. The crystalline fraction of annealed a-Si:H films can reach ∼ 80%, and a grain size up to 17 nm could be obtained from the RTA treatment at 700 °C. We found that the crystallization continues when the grain growth has stopped.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
PublisherMaterials Research Society
Pages105-109
Number of pages5
ISBN (Print)9781605112220
DOIs
StatePublished - 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1245
ISSN (Print)0272-9172

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