Rapid fabricating sub-50 nm FD-SOI: by secondary ion-cut processing

Benjamin T.H. Lee, Y. L. Chang, C. H. Huang, C. C. Ho, F. S. Lo, Y. R. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

One of the things that characterizes the fully depleted silicon-on-insulator (FD-SOI) devices is the ultralow energy consumption. It lets FD-SOI wafers be one of the best candidate materials for manufacturing 5G devices for the Internet of things (IoT), artificial intelligence (AI), and many wireless applications. By using our proposed approach to fabricate FD-SOI wafers employing the ion-cut process, the thickness of the desired as-split silicon can be thinned to 100 nm or less with a pre-deposited Si/SiO2 bilayer. Through the nanonization in thickness of the desired as-split layer, the anneal temperature for an efficient layer split (called primary ion cutting) reduced to 400°C from 500°C due to the inside hydrogen concentration in being supersaturated. It is worth noting that annealing at such a low temperature cannot fully annihilate the implant damage at the peak location in where promoting the occurrence of secondary ion-cut processing. After secondary ion cutting and higherature annealing in argon, which also causes thermal smoothening, the transferred silicon layer was directly reduced to sub-50 nm without requiring an additional polishing step.}

Original languageEnglish
Title of host publication2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538676264
DOIs
StatePublished - 11 Feb 2019
Event2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
Duration: 15 Oct 201818 Oct 2018

Publication series

Name2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
Country/TerritoryUnited States
CityBurlingame
Period15/10/1818/10/18

Keywords

  • 5G devices
  • FD-SOI
  • Secondary ion-cut process
  • Ultralow energy consumption
  • Wafer bonding

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