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Abstract
One of the things that characterizes the fully depleted silicon-on-insulator (FD-SOI) devices is the ultralow energy consumption. It lets FD-SOI wafers be one of the best candidate materials for manufacturing 5G devices for the Internet of things (IoT), artificial intelligence (AI), and many wireless applications. By using our proposed approach to fabricate FD-SOI wafers employing the ion-cut process, the thickness of the desired as-split silicon can be thinned to 100 nm or less with a pre-deposited Si/SiO2 bilayer. Through the nanonization in thickness of the desired as-split layer, the anneal temperature for an efficient layer split (called primary ion cutting) reduced to 400°C from 500°C due to the inside hydrogen concentration in being supersaturated. It is worth noting that annealing at such a low temperature cannot fully annihilate the implant damage at the peak location in where promoting the occurrence of secondary ion-cut processing. After secondary ion cutting and higherature annealing in argon, which also causes thermal smoothening, the transferred silicon layer was directly reduced to sub-50 nm without requiring an additional polishing step.}
Original language | English |
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Title of host publication | 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538676264 |
DOIs | |
State | Published - 2 Jul 2018 |
Event | 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States Duration: 15 Oct 2018 → 18 Oct 2018 |
Publication series
Name | 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 |
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Conference
Conference | 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 |
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Country/Territory | United States |
City | Burlingame |
Period | 15/10/18 → 18/10/18 |
Keywords
- 5G devices
- FD-SOI
- Secondary ion-cut process
- Ultralow energy consumption
- Wafer bonding
Fingerprint
Dive into the research topics of 'Rapid fabricating sub-50 nm FD-SOI: by secondary ion-cut processing'. Together they form a unique fingerprint.Projects
- 2 Finished
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A Study on Cryo-Electrochemistry to Fabricate Nanocrystals on Si Substrate
Lee, T.-H. (PI)
1/08/18 → 31/07/19
Project: Research
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基於矽光子技術之快速多模組醫學檢測研發與應用-基於矽光子技術之快速多模組醫學檢測研發與應用(1/4)
Lee, T.-H. (PI)
1/08/18 → 31/07/19
Project: Research