Randomization of heavily damaged regions in annealed low energy Ge +-implanted (0 0 1)Si

H. H. Lin, S. L. Cheng, L. J. Chen, W. C. Chen, Y. Liou, H. C. Chien

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Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge+-implanted (001)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
Issue number2-4
StatePublished - Jan 2004


  • 001,025
  • 61.72.Tt
  • 68.37.Lp
  • 68.55.-a
  • 68.55.Ln
  • Amorphous Si
  • Ge ions
  • High-resolution transmission electron microscopy
  • Ion implantation


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