Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm

Po Tsung Tu; Indraneel Sanyal; Po Chun Yeh; Heng Yuan Lee; Li Heng Lee; Chih I. Wu; Jen Inn Chyi

doi:10.1109/VLSI-TSA48913.2020.9203728

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm

Po Tsung Tu, Indraneel Sanyal, Po Chun Yeh, Heng Yuan Lee, Li Heng Lee, Chih I. Wu, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	130-131
Number of pages	2
ISBN (Electronic)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203728
State	Published - Aug 2020
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Country/Territory	Taiwan
City	Hsinchu
Period	10/08/20 → 13/08/20

Access to Document

10.1109/VLSI-TSA48913.2020.9203728

Cite this

Tu, P. T., Sanyal, I., Yeh, P. C., Lee, H. Y., Lee, L. H., Wu, C. I., & Chyi, J. I. (2020). Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 130-131). Article 9203728 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203728

Tu, Po Tsung ; Sanyal, Indraneel ; Yeh, Po Chun et al. / Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 130-131 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

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title = "Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm",

abstract = "Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.",

author = "Tu, {Po Tsung} and Indraneel Sanyal and Yeh, {Po Chun} and Lee, {Heng Yuan} and Lee, {Li Heng} and Wu, {Chih I.} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

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Tu, PT, Sanyal, I, Yeh, PC, Lee, HY, Lee, LH, Wu, CI & Chyi, JI 2020, Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203728, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 130-131, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203728

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. / Tu, Po Tsung; Sanyal, Indraneel; Yeh, Po Chun et al.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 130-131 9203728 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tu, Po Tsung

AU - Sanyal, Indraneel

AU - Yeh, Po Chun

AU - Lee, Heng Yuan

AU - Lee, Li Heng

AU - Wu, Chih I.

AU - Chyi, Jen Inn

PY - 2020/8

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N2 - Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

AB - Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

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Tu PT, Sanyal I, Yeh PC, Lee HY, Lee LH, Wu CI et al. Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 130-131. 9203728. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203728