Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly

Chang Ching Tu; Lih Y. Lin

doi:10.1109/OMEMS.2009.5338581

Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly

Chang Ching Tu, Lih Y. Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper we demonstrate photodiodes based on Schottky junction between multilayers of CdTe quantum dots (QDs) and thermally evaporated Au thin film. The CdTe QDs are synthesized and dispersed in aqueous solution with either positively (amino group) or negatively (carboxylate group) charged capping ligands. By electrostatic attraction, the QDs are self-assembled layer-by-layer on a silane functionalized substrate. By changing the number of layers, the thickness of the QD thin film can be well controlled. For the photodiode with 180 nm-thick CdTe QD thin film, external quantum efficiency = 1.38% can be achieved under 405 nm laser illumination and applied voltage = 10 V.

Original language	English
Title of host publication	2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
Pages	89-90
Number of pages	2
DOIs	https://doi.org/10.1109/OMEMS.2009.5338581
State	Published - 2009
Event	2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009 - Clearwater, FL, United States Duration: 17 Aug 2009 → 20 Aug 2009

Publication series

Name	2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009

Conference

Conference	2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
Country/Territory	United States
City	Clearwater, FL
Period	17/08/09 → 20/08/09

Keywords

Layer-by-layer self-assembly
Photodiodes
Quantum dots
Schottky junction

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10.1109/OMEMS.2009.5338581

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title = "Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly",

abstract = "In this paper we demonstrate photodiodes based on Schottky junction between multilayers of CdTe quantum dots (QDs) and thermally evaporated Au thin film. The CdTe QDs are synthesized and dispersed in aqueous solution with either positively (amino group) or negatively (carboxylate group) charged capping ligands. By electrostatic attraction, the QDs are self-assembled layer-by-layer on a silane functionalized substrate. By changing the number of layers, the thickness of the QD thin film can be well controlled. For the photodiode with 180 nm-thick CdTe QD thin film, external quantum efficiency = 1.38% can be achieved under 405 nm laser illumination and applied voltage = 10 V.",

keywords = "Layer-by-layer self-assembly, Photodiodes, Quantum dots, Schottky junction",

author = "Tu, {Chang Ching} and Lin, {Lih Y.}",

year = "2009",

doi = "10.1109/OMEMS.2009.5338581",

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isbn = "9781424423828",

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pages = "89--90",

booktitle = "2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009",

note = "2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009 ; Conference date: 17-08-2009 Through 20-08-2009",

}

Tu, CC & Lin, LY 2009, Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly. in 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009., 5338581, 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009, pp. 89-90, 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009, Clearwater, FL, United States, 17/08/09. https://doi.org/10.1109/OMEMS.2009.5338581

Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly. / Tu, Chang Ching; Lin, Lih Y.
2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009. 2009. p. 89-90 5338581 (2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper we demonstrate photodiodes based on Schottky junction between multilayers of CdTe quantum dots (QDs) and thermally evaporated Au thin film. The CdTe QDs are synthesized and dispersed in aqueous solution with either positively (amino group) or negatively (carboxylate group) charged capping ligands. By electrostatic attraction, the QDs are self-assembled layer-by-layer on a silane functionalized substrate. By changing the number of layers, the thickness of the QD thin film can be well controlled. For the photodiode with 180 nm-thick CdTe QD thin film, external quantum efficiency = 1.38% can be achieved under 405 nm laser illumination and applied voltage = 10 V.

KW - Layer-by-layer self-assembly

KW - Photodiodes

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KW - Schottky junction

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ER -

Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly

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